Related Experiment Video
Updated: Aug 16, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Unconventional materials: the mismatch between electronic charge centers and atomic positions
Jiacheng Gao1, Yuting Qian1, Huaxian Jia1
1Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China.
Researchers identified 423 unconventional materials by analyzing band representations (BRs). These materials exhibit a unique electronic structure mismatch, leading to diverse applications in thermoelectrics, topological insulators, and catalysis.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Chemistry
Background:
- Topological quantum chemistry utilizes band representations (BRs) to characterize electronic band structures.
- BRs can be defined by localized orbitals at Wyckoff sites or irreducible representations in momentum space.
- Unconventional materials present a mismatch between average electronic centers and atomic positions.
Purpose of the Study:
- To define and identify unconventional materials based on their band representation characteristics.
- To establish criteria for diagnosing unconventional materials using elementary BRs (eBRs) and atomic-orbital-induced BRs (aBRs).
- To screen for unconventional materials with potential applications.
Main Methods:
- Defining unconventional materials as those whose occupied bands are sums of eBRs but not aBRs.
- Utilizing real-space invariants (RSIs) to describe essential BRs at empty sites.
- Performing high-throughput screening using first-principles calculations.
Main Results:
- Discovery of 423 unconventional compounds.
- Identification of materials with diverse properties including thermoelectrics, topological insulators, electrides, and superconductors.
- Demonstration of an uncompensated total "valence" state in unconventional materials.
Conclusions:
- Unconventional materials possess unique electronic structures characterized by a mismatch between electronic centers and atomic positions.
- The developed framework enables the identification of a wide range of functional materials.
- These findings open avenues for future research into the diverse properties and applications of unconventional materials.
More Related Videos
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
05:39Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Related Concept Videos
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Electron Configurations
The relative energies of the subshells determine the order in which atomic orbitals are filled (1s, 2s, 2p, 3s, 3p,...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Electric Field of Two Equal and Opposite Charges
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...