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Updated: Aug 16, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature
Sai Li1, Ao Du2, Yadong Wang3
1Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China; Shenyuan Honors College, Beihang University, Beijing 100191, China.
Abstract:
Chiral magnetic skyrmions are topological swirling spin textures that hold promise for future information technology. The electrical nucleation and motion of skyrmions have been experimentally demonstrated in the last decade, while electrical detection compatible with semiconductor processes has not been achieved, and this is considered one of the most crucial gaps regarding the use of skyrmions in real applications. Here, we report the direct observation of nanoscale skyrmions in CoFeB/MgO-based magnetic tunnel junction devices at room temperature. High-resolution magnetic force microscopy imaging and tunneling magnetoresistance measurements are used to illustrate the electrical detection of skyrmions, which are stabilized under the cooperation of interfacial Dzyaloshinskii-Moriya interaction, perpendicular magnetic anisotropy, and dipolar stray field. This skyrmionic magnetic tunnel junction shows a stable nonlinear multilevel resistance thanks to its topological nature and tunable density of skyrmions under current pulse excitation. These features provide important perspectives for spintronics to realize high-density memory and neuromorphic computing.
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