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Updated: Aug 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
A multihalogenation strategy for ambipolar transistors and high-gain inverters with good noise margin
Jie Yang1, Xueli Yang2, Jinyang Chen2
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
No abstract available in PubMed .
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