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Updated: Aug 16, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Piezoelectric and Magnetoelectric Effects of Flexible Magnetoelectric Heterostructure PVDF-TrFE/FeCoSiB
Dandan Wen1,2, Xia Chen2, Fuchao Huang2
1Doctoral Research Station of Chongqing Key Laboratory of Optoelectronic Information Sensing and Transmission Technology, Chongqing University of Post and Telecommunications, Chongqing 400065, China.
Abstract:
Flexible polymer-based magnetoelectric (ME) materials have broad application prospects and are considered as a new research field. In this article, FeCoSiB thin films were deposited on poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) substrate by DC magnetron sputtering. The structure of PVDF-TrFE/FeCoSiB heterostructure thin films was similar to 2-2. Under a bias magnetic field of 70 Oe, the composites have a dramatically increased ME voltage coefficient as high as 111 V/cm⋅Oe at a frequency of about 85 kHz. The piezoelectric coefficient of PVDF-TrFE thin films is 34.87 pC/N. The surface morphology of PVDF-TrFE thin films were studied by FESEM, and the results of XRD and FTIR showed that the β-phase of PVDF-TrFE thin films was dominant. Meanwhile, the effects of different heating conditions on the crystallization and piezoelectric properties of PVDF-TrFE films were also studied. The flexible ME heterojunction composite has a significant ME voltage coefficient and excellent piezoelectric properties at room temperature, which allows it to be a candidate material for developing flexible magnetoelectric devices.

