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Updated: Aug 16, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
Published on: April 4, 2017
Polarization Control in Integrated Graphene-Silicon Quantum Photonics Waveguides
Simone Cammarata1,2, Andrea Fontana3, Ali Emre Kaplan3,4
1Istituto Nazionale di Fisica Nucleare (INFN) Sezione di Pisa, 56127 Pisa, Italy.
Abstract:
We numerically investigated the use of graphene nanoribbons placed on top of silicon-on-insulator (SOI) strip waveguides for light polarization control in silicon photonic-integrated waveguides. We found that two factors mainly affected the polarization control: the graphene chemical potential and the geometrical parameters of the waveguide, such as the waveguide and nanoribbon widths and distance. We show that the graphene chemical potential influences both TE and TM polarizations almost in the same way, while the waveguide width tapering enables both TE-pass and TM-pass polarizing functionalities. Overall, by increasing the oxide spacer thickness between the silicon waveguide and the top graphene layer, the device insertion losses can be reduced, while preserving a high polarization extinction ratio.
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