Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO₃/Al/SrZrTiO₃/ITO with Embedded Al Layer

The SrZrTiO₃ (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedded Al in SZT thin film demonstrated outstanding device parameter improvements, such as a resistance ratio higher than 10⁷, lower operation voltage (V_SET = -0.8 V and V_RESET = 2.05 V), uniform film, and device stability of more than 10⁵ s. The physical properties of the SZT thin film and the embedded-Al SZT thin-film RRAM devices were probed.