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Patterning of Silicon Substrate with Self-Assembled Monolayers Using Vertically Aligned Carbon Nanotube Electron
Yi Yin Yu1, Alfi Rodiansyah1, Jaydip Sawant1
1Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 02447, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|December 23, 2022
Summary
A new electron beam lithography technique uses vertically aligned carbon nanotubes (VACNTs) to pattern silicon wafers with self-assembled monolayers (SAMs). This method enables precise surface modification for microelectromechanical systems (MEMS) applications.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Electron beam lithography is crucial for microfabrication.
- Vertically aligned carbon nanotubes (VACNTs) offer unique electron emission properties.
- Self-assembled monolayers (SAMs) are used for surface functionalization.
Purpose of the Study:
- To introduce a novel e-beam lithography patterning technique using VACNT emitters and SAMs.
- To demonstrate precise patterning on silicon wafers.
- To investigate the surface modification mechanisms induced by electron irradiation.
Main Methods:
- Utilized e-beam lithography with VACNT emitters.
- Employed octadecyl trichlorosilane (OTS) as a photoresist on silicon wafers.
- Conducted contact angle measurements and energy-dispersive X-ray (EDX) analysis to study surface modification.
Main Results:
- Successfully achieved 20 μm line width patterning on silicon wafers using OTS.
- Elucidated the patterning mechanism of electron beam-irradiated OTS via EDX and contact angle analysis.
- Optimized current density and exposure time for effective Si wafer patterning.
Conclusions:
- The novel VACNT-based e-beam lithography technique provides facile operation and precise dose control.
- This method is suitable for fabricating microelectromechanical (MEMS) devices.
- The technique holds potential for diverse microfabrication applications requiring high precision.
