Related Experiment Video
Updated: Aug 16, 2025

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
Published on: August 17, 2017
On-chip integrated quantum emitter with 'trap-enhance-guide': a simulation approach
Abstract:
To address the challenges of developing a scalable system of an on-chip integrated quantum emitter, we propose to leverage the loss in our hybrid plasmonic-photonic structure to simultaneously achieve Purcell enhancement as well as on-chip maneuvering of nanoscale emitter via optical trapping with guided excitation-emission routes. In this report, we have analyzed the feasibility of the functional goals of our proposed system in the metric of trapping strength (∼8KBT), Purcell factor (>1000∼), and collection efficiency (∼10%). Once realized, the scopes of the proposed device can be advanced to develop a scalable platform for integrated quantum technology.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...

