Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

908
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
908
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

433
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
433
Applications of RC Circuits01:22

Applications of RC Circuits

3.3K
A relaxation oscillator is one of the applications of RC circuits. A neon lamp relaxation oscillator comprises a capacitor, a resistor, a voltage source, and a lamp. The lamp acts like an open circuit, with infinite resistance until the potential difference across the lamp reaches a specific voltage. At that voltage, the lamp acts like a short circuit with zero resistance, and the capacitor discharges through the lamp, thus producing light. Once the capacitor is fully discharged through the...
3.3K
Design Example: Frog Muscle Response01:14

Design Example: Frog Muscle Response

288
A student is tasked to work on an intriguing experiment involving an RL (Resistor-Inductor) circuit to study the muscle response of a frog's leg to electrical stimulation. The RL circuit plays a crucial role in this experiment, providing the means to control and measure the electrical impulses that trigger muscle contraction.
When the switch connecting the RL circuit is closed, a brief muscle contraction is observed. This is because, at a steady state, the inductor acts like a short...
288
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

897
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
897
First-Order Circuits01:15

First-Order Circuits

1.5K
First-order electrical circuits, which comprise resistors and a single energy storage element - either a capacitor or an inductor, are fundamental to many electronic systems. These circuits are governed by a first-order differential equation that describes the relationship between input and output signals.
One common example of a first-order circuit is the RC (resistor-capacitor) circuit. These circuits are used in relaxation oscillators such as neon lamp oscillator circuits. When voltage is...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Large magnetoresistance and quantum oscillations observed in superconducting<i>β</i>-IrSn<sub>4</sub>.

Journal of physics. Condensed matter : an Institute of Physics journal·2026
Same author

Probabilistic model of resistance jumps in memristive devices.

Physical review. E·2023
Same author

Custodial Chiral Symmetry in a Su-Schrieffer-Heeger Electrical Circuit with Memory.

Physical review letters·2022
Same author

On the validity of memristor modeling in the neural network literature.

Neural networks : the official journal of the International Neural Network Society·2019
Same author

Snap-through transition of buckled graphene membranes for memcapacitor applications.

Scientific reports·2018
Same author

Surface effects on ionic Coulomb blockade in nanometer-size pores.

Nanotechnology·2017
Same journal

Erratum: Low-dimensional model for adaptive networks of spiking neurons [Phys. Rev. E 111, 014422 (2025)].

Physical review. E·2026
Same journal

Disentangling the effects of many-body forces on depletion interactions.

Physical review. E·2026
Same journal

Charge transport and mode transition in dual-energy electron beam diodes.

Physical review. E·2026
Same journal

Optimization of multisite reactions in complex compartmentalized media.

Physical review. E·2026
Same journal

Origin of geometric cohesion in nonconvex granular materials: Interplay between interdigitation and rotational constraints enhancing frictional stability.

Physical review. E·2026
Same journal

Interaction of walkers with a standing Faraday wave.

Physical review. E·2026
See all related articles

Related Experiment Video

Updated: Aug 16, 2025

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K

Memristive Ising circuits.

Vincent J Dowling1, Yuriy V Pershin1

  • 1Department of Physics and Astronomy, University of South Carolina, Columbia, South Carolina 29208, USA.

Physical Review. E
|December 23, 2022
PubMed
Summary
This summary is machine-generated.

Researchers demonstrate Ising-type interactions in circuits of stochastic memristors. These circuits exhibit unique coexisting ferromagnetic and antiferromagnetic interactions, allowing for Ising model parameter extraction and Hamiltonian reconstruction.

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Related Experiment Videos

Last Updated: Aug 16, 2025

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Area of Science:

  • Statistical Mechanics
  • Condensed Matter Physics
  • Materials Science

Background:

  • The Ising model is fundamental in statistical mechanics for understanding magnetism and phase transitions.
  • Realizing tunable Ising-type interactions in physical systems is crucial for developing novel computational and physical devices.

Purpose of the Study:

  • To demonstrate the realization of Ising-type interactions in periodically driven circuits of stochastic binary resistors with memory.
  • To investigate the unique coexistence of ferromagnetic and antiferromagnetic interactions in these circuits.
  • To show that circuit state statistics can match the Ising model and allow for parameter extraction.

Main Methods:

  • Utilizing periodically driven circuits composed of stochastic binary resistors with memory.
  • Analyzing the statistics of circuit states to identify interaction types and strengths.
  • Extracting Ising model parameters from observed state probabilities.
  • Reconstructing the Ising Hamiltonian based on experimental findings.

Main Results:

  • Successfully realized Ising-type interactions in stochastic memristor circuits.
  • Observed the simultaneous coexistence of ferromagnetic and antiferromagnetic interactions, a novel phenomenon.
  • Demonstrated that circuit state statistics accurately reflect Ising model predictions.
  • Successfully extracted Ising model parameters and reconstructed Hamiltonians for various interaction types.

Conclusions:

  • Periodically driven stochastic memristor circuits can effectively emulate the Ising model.
  • These circuits offer a unique platform for studying systems with competing ferromagnetic and antiferromagnetic interactions.
  • The ability to extract Ising parameters from circuit behavior opens avenues for hardware implementation of complex physical models.