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Updated: Aug 16, 2025

A Method for Growing Bio-memristors from Slime Mold
Published on: November 2, 2017
Memristive Ising circuits
Vincent J Dowling1, Yuriy V Pershin1
1Department of Physics and Astronomy, University of South Carolina, Columbia, South Carolina 29208, USA.
Abstract:
The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous coexistence of ferromagnetic and antiferromagnetic interactions between two neighboring spins-an extraordinary property not available in nature. We demonstrate that the statistics of circuit states may perfectly match the ones found in the Ising model with ferromagnetic or antiferromagnetic interactions, and, importantly, the corresponding Ising model parameters can be extracted from the probabilities of circuit states. Using this finding, the Ising Hamiltonian is reconstructed in several model cases, and it is shown that different types of interaction can be realized in circuits of stochastic memristors.
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