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Updated: Aug 16, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Charge-Noise-Induced Dephasing in Silicon Hole-Spin Qubits
Ognjen Malkoc1, Peter Stano1,2, Daniel Loss1,3,4
1RIKEN Center for Emergent Matter Science, Wako-shi, Saitama 351-0198, Japan.
Abstract:
We investigate, theoretically, charge-noise-induced spin dephasing of a hole confined in a quasi-two-dimensional silicon quantum dot. Central to our treatment is accounting for higher-order corrections to the Luttinger Hamiltonian. Using experimentally reported parameters, we find that the new terms give rise to sweet spots for the hole-spin dephasing, which are sensitive to device details: dot size and asymmetry, growth direction, and applied magnetic and electric fields. Furthermore, we estimate that the dephasing time at the sweet spots is boosted by several orders of magnitude, up to on the order of milliseconds.
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