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Defect-Engineering-Stabilized AgSbTe2 with High Thermoelectric Performance.

Yu Zhang1, Zhi Li2, Saurabh Singh1

  • 1Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA.

Advanced Materials (Deerfield Beach, Fla.)
|December 24, 2022
PubMed
Summary
This summary is machine-generated.

Thermoelectric generators convert heat to electricity. New AgSbTe2 materials with S and Se co-doping achieve high performance in the mid-temperature range, enabling efficient power generation.

Keywords:
AgSbTe 2band flatteningdefect engineeringmid-temperature regionthermoelectricswaste heat recovery

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Energy Conversion

Background:

  • Thermoelectric (TE) generators offer direct heat-electricity conversion for refrigeration and power.
  • Existing TE materials excel at low/high temperatures, but mid-temperature (400-700 K) materials are lacking.

Purpose of the Study:

  • To develop high-performance thermoelectric materials for the critical mid-temperature range.
  • To optimize AgSbTe2 through S and Se co-doping for enhanced thermoelectric properties.

Main Methods:

  • Synthesized p-type AgSbTe2 materials co-doped with sulfur (S) and selenium (Se).
  • Characterized thermoelectric properties, including figure of merit (zT), Seebeck coefficient, and carrier density.
  • Fabricated single-leg and unicouple TE devices to evaluate practical performance.

Main Results:

  • Achieved a peak figure of merit (zTmax) of 2.3 at 673 K and an average zTave of 1.59 (300-673 K).
  • Enhanced performance attributed to increased silver vacancies, improved Seebeck coefficient via valence band flattening, and suppressed Ag2Te formation.
  • Demonstrated device efficiencies of 13.3% (single-leg) and 12.3% (unicouple) at a 370 K temperature difference.

Conclusions:

  • Co-doped AgSbTe2 presents a highly effective strategy for mid-temperature thermoelectric applications.
  • The optimized material exhibits excellent stability and promising device efficiencies.
  • This work addresses the urgent need for efficient thermoelectric materials in the 400-700 K range.