Gas sensing response of ion beam irradiated Ga-doped ZnO thin films

The ion beam induced modified gallium doped ZnO thin films are studied for their gas sensing applications. The Ag⁹⁺ and Si⁶⁺ irradiated gallium doped zinc oxide thin films were exposed to various concentrations of ethanol and acetone gas for gas sensing applications. The Ag⁹⁺ ion irradiated Ga-doped ZnO thin was optimized at different operating temperature. It was observed that gas sensing response for both ethanol and acetone gas increases with increasing Ag⁹⁺ ion fluence. This indicates that the swift heavy ions have improved the sensitivity of Ga-doled ZnO thin film by reducing the particle size. The Si⁶⁺ ion irradiated Ga-doped ZnO thin films were also exposed to ethanol and acetone gas for gas sensing applications. In comparison to Ag⁹⁺ ion irradiated thin film, the film irradiated with Si⁶⁺ ion beam exhibits a greater sensing response to both ethanol and acetone gas.