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Updated: Jul 5, 2026

Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
Ruishu Yang1, Yuqiang Gao2, Shuanhu Wang1
1Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry Under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an710072, China.
Engineered oxide interfaces with a strontium ruthenium oxide buffer layer exhibit enhanced electron mobility and a distinct anomalous Hall effect. This breakthrough advances two-dimensional magnetism and quantum transport in oxide systems.
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