Photo-oscillations in MgZnO/ZnO heterostructures
1Escuela Politécnica Superior, Universidad Carlos III, Leganes, 28911, Madrid, Spain. jinarrea@fis.uc3m.es.
Scientific Reports
|December 28, 2022
Summary
Microwave-induced magnetoresistance (MIRO) and photovoltage oscillations in MgZnO/ZnO heterostructures share a common origin. Our study reveals this link through theoretical examination of radiation-driven electron orbits and scattering processes.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Semiconductor Heterostructures
Background:
- Microwave-induced magnetoresistance (MIRO) and photovoltage oscillations are distinct phenomena observed in semiconductor systems.
- Understanding their underlying physical mechanisms is crucial for device applications.
Purpose of the Study:
- To theoretically investigate the relationship between MIRO and photovoltage oscillations in MgZnO/ZnO heterostructures.
- To identify the common physical origin governing both types of oscillations.
Main Methods:
- Theoretical examination using the radiation-driven electron orbit model.
- Analysis of the interplay between radiation-driven Landau orbits and scattering processes.
Main Results:
- Both MIRO and photovoltage oscillations share the same fundamental physical origin.
- Simulations demonstrate that photovoltage oscillations exhibit key characteristics of MIRO.
- Observed periodicity with inverse magnetic field and a 1/4 cycle shift in oscillation minima.
Conclusions:
- The study establishes an intimate relationship between MIRO and photovoltage oscillations in MgZnO/ZnO heterostructures.
- The radiation-driven electron orbit model successfully explains the observed oscillations in both scenarios.
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