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Schottky barrier effect on plasmon-induced charge transfer
Xinxin Wang1, Shiwu Gao2, Jie Ma1
1Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China. majie@bit.edu.cn.
Nanoscale
|January 4, 2023
Summary
Schottky barriers at metal-semiconductor interfaces enhance plasmon-induced charge transfer. Doping type controls electron or hole transfer, optimizing photocatalytic and photovoltaic applications.
Area of Science:
- Materials Science
- Surface Chemistry
- Quantum Mechanics
Background:
- Plasmon-induced charge transfer is crucial for photocatalysis and photovoltaics.
- Schottky barriers at metal-semiconductor interfaces influence hot carrier dynamics.
Purpose of the Study:
- Investigate plasmon-induced charge transfer at Schottky junctions.
- Understand the role of Schottky barriers in hot carrier dynamics.
- Explore manipulation of charge transfer for enhanced applications.
Main Methods:
- Quantum mechanical simulations of the Ag-TiO2 system.
- Analysis of Schottky barrier effects on electron and hole transfer.
- Examination of hot carrier distribution and spatial separation.
Main Results:
- n-type doping Schottky barriers enhance electron transfer.
- p-type doping Schottky barriers enhance hole transfer.
- Schottky barriers modify hot carrier distribution, enabling spatial separation within the TiO2 substrate.
Conclusions:
- Schottky barriers significantly influence plasmon-induced charge transfer dynamics.
- Doping-induced Schottky barriers offer a mechanism to control charge transfer direction.
- Findings provide insights for optimizing plasmon-assisted photocatalytic and photovoltaic devices.
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