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Multi-functional application potential of Ruddlesden-Popper perovskite-based heterostructure PtSe2/Cs2PbI4with
Cheng-Sheng Liao1, Biao Liu2, Jun-Liang Yang2
1Hunan Provincial Key Laboratory of High-Energy Scale Physics and Applications, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Summary
This study explores PtSe2/Cs2PbI4 heterostructures, revealing tunable electronic properties for optoelectronic devices. Thickness and strain engineering offer pathways to tailor band alignment for photovoltaic and luminescence applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional Ruddlesden-Popper (RP) perovskites offer a promising route to enhance stability and efficiency in optoelectronic devices.
- Constructing heterostructures with tunable properties is key for developing multi-functional devices.
Purpose of the Study:
- Investigate the geometric and electronic structures of PtSe2/Cs2PbI4 heterostructures.
- Explore the impact of thickness modulation and external strain on their optoelectronic properties.
Main Methods:
- First-principle calculations were employed to study the PtSe2/Cs2PbI4 heterostructure.
- Analysis focused on geometric structure, electronic band alignment, and the effects of varying PtSe2 thickness and applied strain.
Main Results:
- Monolayer PtSe2/Cs2PbI4 exhibits a type-II band alignment suitable for photovoltaics.
- Increasing PtSe2 thickness to bilayer switches the band alignment to type-I, beneficial for luminescence.
- Trilayer PtSe2 results in a metallic heterostructure with a p-type Schottky barrier.
- Strain engineering effectively tunes electronic properties across different thicknesses.
Conclusions:
- PtSe2/Cs2PbI4 heterostructures demonstrate tunable electronic properties through thickness control and strain.
- These materials hold significant potential for multi-functional optoelectronic device applications.

