Related Experiment Video
Updated: Aug 15, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory
Kaijin Kang1, Wen Niu1, Yanming Zhang1
1Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
Abstract:
Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/(PMA)2CuBr4/FTO (PMMA = poly(methyl methacrylate); PMA = C6H5CH2NH3) architecture. The device exhibits the coexistence of two bipolar resistive switching modes, including counterclockwise and clockwise switching characteristics. The devices with both switching modes show stable endurance (>100 cycles) and long retention performance (>104 s). By applying a suitable electrical stimulation, the counterclockwise and clockwise switching behaviors are interconvertible. Furthermore, the Au/PMMA/(PMA)2CuBr4/FTO and Ag/(PMA)2CuBr4/FTO devices were fabricated to verify the origin of dual resistive switching behaviors. The similar dual resistive switching behaviors after electroforming processes of three types of memory devices suggest that the interconvertible dual resistive switching characteristics could be attributed to the ionic migration in the (PMA)2CuBr4 perovskite layer.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

