Controlled Silanization of Transparent Conductive Oxides as a Precursor of Molecular Recognition Systems

The search for new molecular recognition systems has become the goal of modern electrochemistry. Creating a matrix in which properties can be controlled to obtain a desired analytical signal is an essential part of creating such tools. The aim of this work was to modify the surface of electrodes based on transparent conductive oxides with the use of selected alkoxysilanes (3-aminopropyltrimethoxysilane, trimethoxy(propyl)silane, and trimethoxy(octyl)silane). Electrochemical impedance spectroscopy and cyclic voltammetry techniques, as well as contact angle measurements, were used to determine the properties of the obtained layers. Here, we prove that not only was the structure of alkoxysilanes taken into account but also the conditions of the modification process-reaction conditions (time and temperature), double alkoxysilane modification, and mono- and binary component modification. Our results enabled the identification of the parameters that are important to ensure the effectiveness of the modification process. Moreover, we confirmed that the selection of the correct alkoxysilane allows the surface properties of the electrode material to be controlled and, consequently, the charge transfer process at the electrode/solution interface, hence enabling the creation of selective molecular recognition systems.