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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
305

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The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis.

Weng Hoe Lam1, Weng Siew Lam1, Pei Fun Lee1

  • 1Department of Physical and Mathematical Science, Faculty of Science, Universiti Tunku Abdul Rahman, Kampar Campus, Jalan Universiti, Bandar Barat, Kampar 31900, Perak, Malaysia.

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Research on Gallium Nitride (GaN) shows a significant upward trend, particularly in the last decade. Studies indicate a growing focus on high-voltage applications, with the United States leading in publications and impactful research.

Keywords:
VOSviewerbibliometric analysisgallium nitridesemiconductorsubject area

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Area of Science:

  • Materials Science
  • Physics
  • Engineering

Background:

  • Gallium Nitride (GaN) possesses a wide energy band gap, high power density, efficiency, switching frequency, and electron carrier mobility.
  • These properties make GaN suitable for diverse applications in digitization.

Purpose of the Study:

  • To conduct a bibliometric analysis of Gallium Nitride (GaN) research.
  • To identify trends, key research areas, and leading contributors in GaN publications from 1970 to 2023.

Main Methods:

  • Bibliometric analysis of 15,634 GaN publications from the Web of Science database.
  • Performance analysis using Harzing's Publish or Perish tool.
  • Science mapping using VOSviewer software.

Main Results:

  • A clear uptrend in GaN research, especially over the past decade.
  • Dominant research fields include physics, engineering, and materials science.
  • The United States leads in publication volume and research impact, with active international collaborations.
  • A discernible shift towards high-voltage applications in GaN research.

Conclusions:

  • GaN research is expanding rapidly, with significant recent acceleration.
  • The United States is a major hub for GaN innovation and collaboration.
  • Future research is increasingly concentrating on developing high-voltage GaN technologies.