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Silicon Carbide Nanostructures as Potential Carbide Material for Electrochemical Supercapacitors: A Review
Gunendra Prasad Ojha1,2, Gun Woong Kang3, Yun-Su Kuk4
1Carbon Composite Energy Nanomaterials Research Center, Woosuk University, Wanju-Gun, Chonbuk 55338, Republic of Korea.
Abstract:
Silicon carbide (SiC) is a very promising carbide material with various applications such as electrochemical supercapacitors, photocatalysis, microwave absorption, field-effect transistors, and sensors. Due to its enticing advantages of high thermal stability, outstanding chemical stability, high thermal conductivity, and excellent mechanical behavior, it is used as a potential candidate in various fields such as supercapacitors, water-splitting, photocatalysis, biomedical, sensors, and so on. This review mainly describes the various synthesis techniques of nanostructured SiC (0D, 1D, 2D, and 3D) and its properties. Thereafter, the ongoing research trends in electrochemical supercapacitor electrodes are fully excavated. Finally, the outlook of future research directions, key obstacles, and possible solutions are emphasized.
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