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First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

Kai-Huang Chen1, Chien-Min Cheng2, Na-Fu Wang1

  • 1Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, Taiwan.

Nanomaterials (Basel, Switzerland)
|January 8, 2023
PubMed

Keywords:
RRAMdecayreaction rate constantvanadium oxide

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