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Updated: Aug 14, 2025

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
Published on: May 23, 2017
Exploiting flux shadowing for strain and bending engineering in core-shell nanowires
Mahmoud Al Humaidi1,2,3, Julian Jakob1,2, Ali Al Hassan2,3
1Laboratory for Applications of Synchrotron Radiation, Karlsruhe Institute of Technology, Kaiserstraße 12, D-76131 Karlsruhe, Germany. mahmoud.humaidi@kit.edu.
Abstract:
Here we report on the non-uniform shell growth of InGa1-As on the GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with the pitch size (p) ranging from 0.1 μm to 10 μm. Considering the preferable bending direction with respect to the MBE cells as well as the layout of the substrate pattern, we were able to modify the strain distribution along the NW growth axis and the subsequent bending profile. For NW arrays with a high number density, the obtained bending profile of the NWs is composed of straight (barely-strained) and bent (strained) segments with different lengths which depend on the pitch size. A precise control of the bent and straight NW segment length provides a method to design NW based devices with length selective strain distribution.
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