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Inversion Symmetry and Exotic Interlayer Exciton Behavior in Twisted Trilayer MoS2 Produced by Vapor Deposition
Weiyang Liu1, Siwei Luo1, Xiang Qi1
1Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan411105, People's Republic of China.
Abstract:
Two-dimensional materials (2DMs) that are stacked vertically with a certain twist angle provide new degrees of freedom for designing novel physical properties. Twist-related properties of homogeneous bilayer and heterogeneous bilayer 2DMs, such as excitons and phonons, have been described in many pioneering works. However, twist-related properties of homogeneous trilayer 2DMs have been rarely reported. In this work, trilayer MoS2 with the twisted angle of 12° by optimized vapor deposition rather than the conventional mechanical stacking method was successfully fabricated. The inversion symmetry of trilayer MoS2 is changed by twist. Phonons and excitons produced by twist have an enormous influence on the interlayer interaction of trilayer MoS2, making trilayer MoS2 appear to have exotic optical properties. Compared with monolayer MoS2, the phonon vibration and photoluminescence intensity of trilayer MoS2 with one-interlayer-twisted are significantly improved, and the second harmonic generation response in the non-twist region of trilayer MoS2 is ∼3 times that of monolayer MoS2. In addition, interlayer coupling, inversion symmetry, and exciton behavior of the twist region show regional differences. This work provides a new way for designing twist and exploring the influence of twist on the structures of 2DMs with few layers.
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