High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.

Xinming Zhuang1,2,3,4, Joon-Seok Kim5, Wei Huang2,6

  • 1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China.

Summary

Researchers developed flexible, low-power electronics using indium oxide source-gated transistors (SGTs). These transistors achieve high gain and low power consumption, enabling applications in wearable technology and medical sensing.

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