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High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed
1Institute of Novel Semiconductor Materials and State Key Laboratory of Crystal Materials, Shandong University, Jinan250100, China.
The Journal of Physical Chemistry Letters
|January 12, 2023
Summary
This study introduces a novel hydrogen-terminated diamond solar-blind phototransistor. This device offers enhanced responsivity and photocurrent due to internal gain, outperforming traditional photodetectors.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Devices
Background:
- Diamond-based photodetectors offer potential for UV detection due to their wide bandgap.
- Conventional two-terminal diamond photodetectors often lack sufficient gain and responsivity.
- Solar-blind photodetectors are crucial for applications requiring UV light detection while ignoring visible light.
Purpose of the Study:
- To fabricate and characterize a novel solar-blind phototransistor utilizing hydrogen-terminated diamond.
- To investigate the performance enhancements, particularly responsivity and photocurrent, attributed to the phototransistor's internal gain.
- To demonstrate the tunability of device performance, including photocurrent generation and decay time, via gate voltage adjustments.
Main Methods:
- Fabrication of a hydrogen-terminated diamond-based phototransistor.
- Characterization of device performance under 213 nm light illumination.
- Analysis of photoresponsivity, detectivity, and decay time as a function of gate voltage (V_G) and drain voltage (V_D).
Main Results:
- The fabricated phototransistor achieved high photoresponsivity (R) of 2.16 × 10^4 A/W and detectivity (D*) of 9.63 × 10^11 jones at V_G ≈ -1.5 V and V_D ≈ -5 V.
- Satisfactory performance with R = 146.7 A/W and D* = 6.19 × 10^10 jones was observed even at an ultralow operating voltage of -0.01 V.
- Photocurrent generation was tunable from photoconductive to optical gating effects with high optical gain by adjusting V_G.
- Decay time decreased from 1512.0 to 25.5 ms as V_G increased from 1.4 to 2.4 V, demonstrating effective tuning of device response.
Conclusions:
- The hydrogen-terminated diamond phototransistor demonstrates superior performance compared to conventional diamond photodetectors.
- The internal gain mechanism in the phototransistor significantly enhances responsivity and photocurrent.
- Gate voltage provides effective control over device performance, including responsivity, dark current, photocurrent-to-dark current ratio, and decay time, enabling versatile applications.
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