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Carrier and phonon transport in 2D InSe and its Janus structures
Wenhui Wan1, Rui Guo1, Yanfeng Ge1
1State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.
Summary
This review covers recent advancements in two-dimensional Indium Selenide (2D InSe) and its Janus structures, focusing on carrier and phonon transport properties for potential applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Two-dimensional Indium Selenide (2D InSe) exhibits unique physical properties and potential applications.
- Research interest in 2D InSe has surged due to its nanoscale characteristics.
Purpose of the Study:
- To review recent research on carrier and phonon transport in 2D InSe and its Janus structures.
- To summarize experimental and theoretical findings on 2D InSe's properties.
Main Methods:
- Review of experimental and theoretical studies on 2D InSe.
- Analysis of carrier mobility, thermal conductivity, and thermoelectric characteristics.
- Application of the Boltzmann transport equation (BTE) to understand scattering mechanisms.
Main Results:
- Detailed discussion of carrier and phonon scattering mechanisms in 2D InSe.
- Summary of synthesis progress and transport properties of 2D InSe.
- Presentation of structural and transport properties of InSe-based Janus structures via theoretical simulations.
Conclusions:
- 2D InSe and its Janus structures show significant promise for future research and applications.
- Understanding transport properties is key to unlocking the full potential of these materials.
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