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Updated: Aug 14, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic
Joon Pyo Kim1, Seong Kwang Kim1, Seohak Park1
1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon34141, Republic of Korea.
Abstract:
The coming of the big-data era brought a need for power-efficient computing that cannot be realized in the Von Neumann architecture. Neuromorphic computing which is motivated by the human brain can greatly reduce power consumption through matrix multiplication, and a device that mimics a human synapse plays an important role. However, many synaptic devices suffer from limited linearity and symmetry without using incremental step pulse programming (ISPP). In this work, we demonstrated a charge-trap flash (CTF)-based synaptic transistor using trap-level engineered Al2O3/Ta2O5/Al2O3 gate stack for successful neuromorphic computing. This novel gate stack provided precise control of the conductance with more than 6 bits. We chose the appropriate bias for highly linear and symmetric modulation of conductance and realized it with very short (25 ns) identical pulses at low voltage, resulting in low power consumption and high reliability. Finally, we achieved high learning accuracy in the training of 60000 MNIST images.
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