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Updated: Aug 14, 2025
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate
Jiahui Hu1, Feng Wu1, Jiangnan Dai1
1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
Abstract:
Indium gallium nitride (InGaN) based blue light-emitting diodes (LEDs) suffer from insufficient crystal quality and serious efficiency droop in large forward current. In this paper, the InGaN-based blue LEDs are grown on sputtered aluminum nitride (AlN) films to improve the device light power and weaken the efficiency droop. The effects of oxygen flow rate on the sputtering of AlN films on sapphire and device performance of blue LEDs are studied in detail. The mechanism of external quantum efficiency improvement is related to the change of V-pits density in multiple quantum wells. The external quantum efficiency of 66% and 3-V operating voltage are measured at a 40-mA forward current of with the optimal oxygen flow rate of 4 SCCM.
