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    Undoped gallium antimonide (GaSb) retained its crystal structure up to 8 GPa under laser-driven impacts. At higher pressures (13-23 GPa), GaSb transformed into an amorphous state, indicating pressure-induced structural changes.

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    Area of Science:

    • Materials Science
    • Condensed Matter Physics
    • Solid State Chemistry

    Background:

    • Understanding pressure-induced phase transitions is crucial for materials science.
    • Gallium antimonide (GaSb) is a semiconductor with potential applications in electronics and optoelectronics.
    • The long-term structural stability of GaSb under extreme conditions requires further investigation.

    Purpose of the Study:

    • To investigate the pressure-induced long-term effects on the crystal structure of undoped gallium antimonide (GaSb).
    • To determine the critical pressure thresholds for structural transformations in GaSb under hypervelocity impact conditions.

    Main Methods:

    • Laser-driven hypervelocity impact experiments were conducted to generate high-pressure conditions.
    • X-ray diffraction (XRD) was employed to analyze the crystalline structure of GaSb samples.
    • Confocal micro-Raman spectroscopy was utilized to assess changes in vibrational modes and structural order.

    Main Results:

    • Undoped GaSb maintained its bulk crystallinity at pressures up to 8 GPa.
    • Localized site disordering was observed in GaSb at 8 GPa.
    • A phase transformation to an amorphous state occurred at 13 GPa and persisted up to 23 GPa.

    Conclusions:

    • Gallium antimonide (GaSb) exhibits significant structural changes under high-pressure shock compression.
    • The transition to an amorphous state at 13 GPa highlights the sensitivity of GaSb's crystal structure to pressure.
    • These findings provide insights into the mechanical behavior and phase stability of GaSb under extreme conditions.