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Related Experiment Video

Updated: Aug 14, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

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Engineering Second-Order Corner States in 2D Multiferroics.

Yingxi Bai¹, Ning Mao¹, Runhan Li¹

¹School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China.

Small (Weinheim an Der Bergstrasse, Germany)

|January 16, 2023

Summary

This summary is machine-generated.

Researchers demonstrate 2D multiferroic second-order topological insulators (SOTIs) in SbAs and BP5 monolayers. They propose engineering nontrivial corner states using ferroelasticity and ferroelectricity for tunable topological materials.

Keywords:

ferroelastic ferroelectric second-order topological insulators zero-dimensional corner states

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Area of Science:

Condensed Matter Physics
Materials Science
Quantum Physics

Background:

Second-order topological insulators (SOTIs) are crucial for fundamental physics and topotronics.
Efficient engineering of SOTIs in specific materials remains a significant challenge.

Purpose of the Study:

To theoretically demonstrate 2D multiferroic SOTIs in SbAs and BP5 monolayers.
To propose a method for engineering nontrivial corner states using ferroelasticity and ferroelectricity.

Main Methods:

Theoretical demonstration of SOTIs in 2D multiferroic materials.
Analysis of corner state emergence and tuning via ferroelectric polarization and ferroelastic switching.

Main Results:

Emergence of 2D multiferroic SOTIs in SbAs and BP5 monolayers.
Nontrivial corner states appear perpendicular to ferroelectric polarization.
Spatial distribution of corner states is tunable via ferroelastic switching.
Corner states vanish at intermediate ferroelectric and ferroelastic switching states.

Conclusions:

Combines exotic SOTIs with multiferroics.
Paves the way for experimental discovery of 2D tunable SOTIs.
Offers a straightforward method for engineering topological corner states.