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Boosting Phototransistor Performance in Monolayer TMDs via Multiple Reflections from DBR
Ashok Mondal1,2, Chandan Biswas1, Young Hee Lee1,2,3
1Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
ACS Omega
|January 16, 2023
Summary
Researchers enhanced phototransistor performance using distributed Bragg reflectors (DBRs). This strategy significantly boosts photocurrent and photoresponsivity in transition-metal dichalcogenides (TMDs) like MoS2 and WS2 devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Transition-metal dichalcogenides (TMDs) are promising for high-performance phototransistors.
- Current TMD phototransistors face limitations due to single photoexcitation, hindering optimal device performance.
Purpose of the Study:
- To investigate a novel strategy for enhancing phototransistor performance.
- To explore the use of distributed Bragg reflectors (DBRs) to boost device efficiency.
Main Methods:
- Fabrication of monolayer molybdenum disulfide (MoS2) and tungsten disulfide (WS2) phototransistors on both DBR and SiO2 substrates.
- Comparison of device performance metrics between DBR-based and standard substrates.
- Utilizing transparent graphene electrodes and hBN encapsulation for optimized device structures.
Main Results:
- Significant enhancements observed in DBR-based phototransistors compared to control samples.
- Demonstrated a 582-fold increase in photoresponsivity ratio and a 350-fold increase in photocurrent ratio.
- Key performance metrics like photocurrent, responsivity, photoinduced mobility, and subthreshold swing were analyzed.
Conclusions:
- Fabricating TMD phototransistors on DBR substrates is a unique and effective strategy for performance enhancement.
- The DBR approach, combined with advanced materials like graphene and hBN, offers a pathway to superior optoelectronic devices.
