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Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

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Related Experiment Video

Updated: Aug 14, 2025

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Metal Halide Perovskite Heterostructures: Blocking Anion Diffusion with Single-Layer Graphene.

Matthew P Hautzinger¹, Emily K Raulerson¹, Steven P Harvey¹

¹National Renewable Energy Laboratory, Golden, Colorado80401, United States.

Journal of the American Chemical Society

|January 17, 2023

Summary

This summary is machine-generated.

Single-layer graphene effectively blocks halide diffusion in perovskite heterostructures, enabling sharp interfaces. This innovation allows for stable, all-perovskite optoelectronics with controlled charge and light.

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Area of Science:

Materials Science
Solid-State Physics
Optoelectronics

Background:

Metal halide perovskite/perovskite heterostructures are crucial for optoelectronics.
Interfacial halide diffusion degrades heterostructure sharpness and performance.
Developing methods to maintain sharp interfaces is essential for device stability.

Purpose of the Study:

To develop an effective ion-blocking layer for metal halide perovskite heterostructures.
To investigate the impact of single-layer graphene (SLG) on interfacial halide diffusion.
To explore the potential of SLG-intercalated perovskite heterostructures in optoelectronic devices.

Main Methods:

Fabrication of CsPbBr3/SLG/CsPbI3 heterostructures.
Spatially resolved elemental analysis and spectroscopic measurements (e.g., UPS, TAS).
Density Functional Theory (DFT) calculations.
Fabrication and testing of light-emitting diodes (LEDs).

Main Results:

SLG effectively blocked anion diffusion between CsPbBr3 and CsPbI3 layers.
Control samples without SLG showed rapid halide homogenization and interface loss.
SLG exhibited minimal electronic impact on the individual perovskite semiconductors.
A type I band alignment was observed, facilitating photogenerated carrier transfer.
LEDs demonstrated electroluminescence from both perovskite layers without ion diffusion during operation.

Conclusions:

Single-layer graphene serves as an effective ion-blocking layer in perovskite heterostructures.
This approach enables the creation of stable, sharp all-perovskite interfaces.
The developed heterostructures show promise for advanced optoelectronic applications requiring controlled charge and light management.