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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots
Kevin D Vallejo1, Carlos I Cabrera-Perdomo2, Trent A Garrett3
1Condensed Matter and Materials Physics, Idaho National Laboratory, Idaho Falls, Idaho83415, United States.
ACS Nano
|January 17, 2023
Summary
We developed tunable mid-infrared light sources using indium gallium arsenide quantum dots (QDs) grown on gallium antimonide. These QDs emit light between 3.2-3.9 μm, with size-tuning and strain engineering enabling new infrared applications.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optoelectronics
Background:
- Indium gallium arsenide quantum dots (InGaAs QDs) are crucial for optoelectronic devices.
- Achieving tunable emission in the mid-wave infrared (MWIR) spectrum remains a challenge.
Purpose of the Study:
- To demonstrate tailored growth of InGaAs QDs on GaSb(111)A surfaces for MWIR emission.
- To investigate the influence of QD size and strain on optical properties and band alignment.
Main Methods:
- Utilized molecular beam epitaxy for self-assembled InGaAs QD growth on GaSb(111)A.
- Employed tensile strain to reduce the band gap energy of the QDs.
- Analyzed emission wavelengths and attributed spectral shifts to Sb incorporation.
Main Results:
- Achieved QDs with excellent structural and optical quality via Volmer-Weber growth.
- Demonstrated MWIR emission in the 3.2-3.9 μm range by harnessing tensile strain.
- Observed a blue-shift in emission with increasing QD size, attributed to Sb incorporation.
- Tuned band alignment from type-III to type-II with increasing QD size.
Conclusions:
- Tailored growth of InGaAs QDs on GaSb enables tunable MWIR light sources.
- Sb incorporation from the GaSb barrier influences QD emission properties.
- This approach holds promise for developing novel tunable MWIR optoelectronic devices.
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