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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

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Published on: July 8, 2016

Core/Shell ZnO/ZnS Nanoparticle Electron Transport Layers Enable Efficient All-Solution-Processed Perovskite

Fan Cao^1,2, Qianqian Wu³, Wunan Li^1,2

¹College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)

|January 18, 2023

Summary

Solution-processed perovskite LEDs now use core/shell ZnO/ZnS nanoparticles for improved electron transport. This enhances device stability and performance, overcoming previous limitations in perovskite light-emitting diode fabrication.

Keywords:

ZnO/ZnS core/shell nanoparticles all-solution-processing electron transport layers light-emitting diodes quasi-2D perovskites

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Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Solution-processed perovskite-based light-emitting diodes (PeLEDs) offer potential for low-cost, large-area displays.
Fabrication challenges include perovskite layer deterioration during electron transport layer deposition.

Purpose of the Study:

To develop a stable and efficient solution-processed electron transport layer for PeLEDs.
To mitigate interfacial issues between the perovskite and electron transport layers.

Main Methods:

Employing core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer.
Investigating the role of the ZnS shell in passivating ZnO core defects and reducing interfacial recombination.
Fabricating PeLEDs based on quasi-2D PEA2Cs(n-1)PbnBr(3n+1) perovskite.

Main Results:

The ZnS shell effectively passivates trap states on the ZnO core and removes hydroxyl groups.
Core/shell ZnO/ZnS nanoparticles maintain high electron mobility while reducing the energy barrier for charge injection.
Optimized PeLEDs demonstrate a peak luminance of 32,400 cd/m², external quantum efficiency of 10.3%, and 20-fold improved longevity compared to ZnO-based devices.

Conclusions:

Core/shell ZnO/ZnS nanoparticles represent a superior electron transport layer for solution-processed PeLEDs.
This approach significantly enhances device performance and operational stability.
The findings pave the way for advanced, cost-effective perovskite display technologies.