Related Experiment Video
Updated: Aug 14, 2025

Detection and Quantification of Tunneling Nanotubes Using 3D Volume View Images
Published on: August 31, 2022
Hole-dominated Fowler-Nordheim tunneling in 2D heterojunctions for infrared imaging
Lei Tong1, Meng Peng2, Peisong Wu3
1School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
Abstract:
Heterostructures based on diverse two-dimensional (2D) materials are effective for tailoring and further promoting device performance and exhibit considerable potential in photodetection. However, the problem of high-density thermionic carriers can be hardly overcome in most reported heterostructure devices based on type I and type II band alignment, which leads to an unacceptably small Iphoto/Idark and strong temperature dependence that limit the performance of photodetectors. Here, using the MoTe2/h-BN/MoTe2/h-BN heterostructure, we report the hole-dominated Fowler-Nordheim quantum tunneling transport in both on and off states. The state-of-the-art device operating at room temperature shows high detectivity of >108 Jones at a laser power density of <0.3 nW μm-2 from the visible to near infrared range. In addition, the fast on-off switching and highly sensitive photodetection properties promise superior imaging capabilities. The tunneling mechanism, in combination with other unique properties of 2D materials, is significant for novel photodetection.
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
P-N junction

