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Wide-bandgap perovskites for indoor photovoltaics

Mingjie Feng1, Chuantian Zuo2, Ding-Jiang Xue3

  • 1National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou 450002, China; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Molecular Nanostructure and Nanotechnology (CAS), Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.

Science Bulletin
|January 19, 2023
PubMed
Abstract

No abstract available in PubMed .

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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