A Polymorphic Memtransistor with Tunable Metallic and Semiconducting Channel.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Neuromorphic computing requires energy-efficient transistors with biological plasticity.
• Alternative transport mechanisms like tunneling and thermionic emission in 2D materials are explored for efficient data processing.

Purpose of the Study:

• To present a polymorphic memtransistor based on atomically thin Mo$_{0.91}$W$_{0.09}$Te$_{2}$ capable of electrical switching between metallic and semiconducting phases.
• To explore the structural and electronic phase change of the channel material at the device scale.

Main Methods:

• Device fabrication using atomically thin Mo$_{0.91}$W$_{0.09}$Te$_{2}$.
• Electrical gating to tune lattice and electronic structures between metallic (1T') and semiconducting (2H) phases.
• Transport and optical measurements to characterize phase transitions.

Main Results:

• Demonstration of a polymorphic memtransistor with tunable phases.
• Achieved high on/off ratio (up to 10$^{5}$) and low subthreshold swing (down to 80 mV dec$^{-1}$).
• Exhibited diverse memristive behaviors distinct from traditional devices.

Conclusions:

• The polymorphic memtransistor based on Mo$_{0.91}$W$_{0.09}$Te$_{2}$ offers a promising platform for neuromorphic and in-memory computing.
• The ability to electrically tune phase provides a new pathway for energy-efficient electronic devices.