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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

Comment on "Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional

Walter R L Lambrecht1

  • 1Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH-44106-7079, USA. walter.lambrecht@case.edu.

Physical Chemistry Chemical Physics : PCCP
|January 19, 2023
PubMed

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