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Hidden spin polarization in the 1T-phase layered transition-metal dichalcogenides MX2 (M = Zr, Hf; X = S, Se, Te)
Cai Cheng1, Jia-Tao Sun2, Xiang-Rong Chen3
1Institute of Atomic and Molecular Physics, College of Physical Science and Technology, Sichuan University, Chengdu 610064, China; Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Abstract:
The recent discovery of hidden spin polarization emerging in layered materials of specific nonmagnetic crystal is a fascinating phenomenon, though hardly explored yet. Here, we have studied hidden spin textures in layered nonmagnetic 1T-phase transition-metal dichalcogenides MX2 (M = Zr, Hf; X = S, Se, Te) by using first-principles calculations. Spin-layer locking effect, namely, energy-degenerate opposite spins spatially separated in the top and bottom layer respectively, has been identified. In particular, the hidden spin polarization of β-band can be easily probed, which is strongly affected by the strength of spin-orbit coupling. The hidden spin polarization of ξ-band locating at high symmetry M point (conduction band minimum) has a strong anisotropy. In the bilayer, the hidden spin polarization is preserved at the upmost Se layer, while being suppressed if the ZrSe2 layer is taken as the symmetry partner. Our results on hidden spin polarization in 1T-phase dichalcogenides, verifiable by spin-resolved and angle-resolved photoemission spectroscopy (ARPES), enrich our understanding of spin physics and provide important clues to search for specific spin polarization in two dimensional materials for spintronic and quantum information applications.
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