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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
C-V characteristics of piezotronic metal-insulator-semiconductor transistor
Jiayang Zheng1, Yongli Zhou2, Yaming Zhang3
1School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; Department of Computer Science, University of Rochester, Rochester, NY 14627, USA.
Abstract:
Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal-insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices.
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