Related Experiment Video
Updated: Aug 13, 2025

Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices
Published on: January 27, 2017
From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions
Ce Hu1, Dong Zhang2, Faguang Yan2
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Abstract:
Different than covalently bonded magnetic multilayer systems, high-quality interfaces without dangling bonds in van der Waals (vdW) junctions of two-dimensional (2D) layered magnetic materials offer opportunities to realize novel functionalities. Here, we report the fabrication of multi-state vertical spin valves without spacer layers by using vdW homo-junctions in which exfoliated Fe3GeTe2 nanoflakes act as ferromagnetic electrodes and/or interlayers. We demonstrate the typical behavior of two-state and three-state magnetoresistance for devices with two and three Fe3GeTe2 nanoflakes, respectively. Distinct from traditional spin valves with sandwich structures, our novel homo-junction-based spin-valve structure allows the straightforward realization of multi-state magnetic devices. Our work demonstrates the possibility of extend multi-state, non-volatile spin information to 2D magnetic homo-junctions, and it emphasizes the utility of vdW interface as a fundamental building block for spintronic devices.
Related Concept Videos
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Valence Bond Theory
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Spin–Spin Coupling: One-Bond Coupling

