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Compressed Graphene Assembled Film with Tunable Electrical Conductivity
Qiang Chen1, Zhe Wang2, Huihui Jin3
1Hubei Engineering Research Center of RF-Microwave Technology and Application, Wuhan University of Technology, Wuhan 430070, China.
Materials (Basel, Switzerland)
|January 21, 2023
Summary
Compressive stress enhances the electrical conductivity of graphene assembled films (GAFs) by increasing charge carrier density. This method optimizes graphene materials for flexible electronics, improving sensor performance.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Graphene-based materials offer high electrical conductivity but macro-scale versions lag behind metals.
- Reduced graphene oxide (rGO) assembled films (GAFs) require improved conductivity for broader applications.
Purpose of the Study:
- To enhance the electrical conductivity of reduced graphene oxide (rGO) based graphene assembled films (GAFs).
- To investigate the relationship between applied compressive stress and the electrical conductivity of GAFs.
- To explore the potential of compressed GAFs (c-GAFs) in flexible electronic devices.
Main Methods:
- Applying a series of compressive stresses to GAFs.
- Systematically measuring sheet resistance and thickness under varying stress.
- Fabricating compressed GAFs (c-GAFs) into strain sensors for performance evaluation.
Main Results:
- Increasing compressive stress decreased GAF thickness while increasing sheet resistance.
- Electrical conductivity of c-GAFs peaked at 5.37 × 10^5 S/m under 450 MPa stress.
- c-GAFs demonstrated superior stability and sensitivity as strain sensors compared to uncompressed GAFs.
Conclusions:
- Compressive stress controllably tunes the electrical conductivity of macro-graphene materials.
- The enhanced conductivity is attributed to increased charge carrier density per unit volume.
- Compressed GAFs show significant potential for applications in flexible electronics, including sensors and wearable devices.
