Adhesion Evaluation of an Embedded SiN/GaAs Interface Using a Novel "Push-Out" Technique

Area of Science:

• Materials Science
• Nanotechnology
• Mechanical Engineering

Background:

• Assessing embedded interface adhesion in multilayer systems with ductile layers is complex due to plastic deformation.
• Existing methods often struggle to isolate interfacial properties from bulk material behavior.

Purpose of the Study:

• To develop and validate an innovative "push-out" technique for evaluating the interfacial toughness (G) of embedded SiN/GaAs interfaces.
• To accurately measure the adhesion energy of the SiN/GaAs interface within a Au/SiN/GaAs multilayer system.

Main Methods:

• Utilized Focus Ion Beam (FIB) milling for miniaturized specimen fabrication.
• Employed a scratching test with a conical indenter to apply load and induce tensile stress.
• Minimized plastic deformation in the ductile gold (Au) layer during testing.

Main Results:

• Successfully detached the Au/SiN bilayer from the Gallium Arsenide (GaAs) substrate with minimal plasticity.
• Derived interfacial delamination energy from load-displacement curves.
• Calculated the average interfacial toughness (G) of the SiN/GaAs interface as 4.86 ± 0.96 J m⁻².

Conclusions:

• The developed push-out technique is effective for assessing interfacial toughness in systems with ductile layers.
• This method provides a reliable approach to quantify adhesion at embedded interfaces.
• The results offer critical data for the design and reliability of multilayer semiconductor devices.