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Adhesion Evaluation of an Embedded SiN/GaAs Interface Using a Novel "Push-Out" Technique.

Sahar Dehkhoda1, Mingyuan Lu1, Han Huang1

  • 1School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, QLD 4072, Australia.

Micromachines
|January 21, 2023
PubMed
Summary

This study introduces a novel push-out method to measure the interfacial toughness of SiN/GaAs interfaces in multilayer systems. The technique minimizes plastic deformation, enabling accurate adhesion assessment.

Keywords:
adhesiondelaminationembedded interfacemultilayer

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Mechanical Engineering

Background:

  • Assessing embedded interface adhesion in multilayer systems with ductile layers is complex due to plastic deformation.
  • Existing methods often struggle to isolate interfacial properties from bulk material behavior.

Purpose of the Study:

  • To develop and validate an innovative "push-out" technique for evaluating the interfacial toughness (G) of embedded SiN/GaAs interfaces.
  • To accurately measure the adhesion energy of the SiN/GaAs interface within a Au/SiN/GaAs multilayer system.

Main Methods:

  • Utilized Focus Ion Beam (FIB) milling for miniaturized specimen fabrication.
  • Employed a scratching test with a conical indenter to apply load and induce tensile stress.
  • Minimized plastic deformation in the ductile gold (Au) layer during testing.

Main Results:

  • Successfully detached the Au/SiN bilayer from the Gallium Arsenide (GaAs) substrate with minimal plasticity.
  • Derived interfacial delamination energy from load-displacement curves.
  • Calculated the average interfacial toughness (G) of the SiN/GaAs interface as 4.86 ± 0.96 J m⁻².

Conclusions:

  • The developed push-out technique is effective for assessing interfacial toughness in systems with ductile layers.
  • This method provides a reliable approach to quantify adhesion at embedded interfaces.
  • The results offer critical data for the design and reliability of multilayer semiconductor devices.