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Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs)
Seung Heon Shin1, Jae-Phil Shim2, Hyunchul Jang2
1Department of Semiconductor Process Equipment, Semiconductor Convergence Campus, Korea Polytechnics, 41-12, Songwon-gil, Gongdo-eup, Anseong-si 17550, Republic of Korea.
Micromachines
|January 21, 2023
Summary
We developed InGaAs/InAs composite channel metamorphic high electron mobility transistors (mHEMTs) on GaAs substrates. These devices show excellent DC and high-frequency performance with reduced power consumption.
Area of Science:
- Materials Science
- Semiconductor Physics
- Device Engineering
Background:
- Metamorphic high electron mobility transistors (mHEMTs) are crucial for high-frequency applications.
- Achieving high performance in mHEMTs on GaAs substrates presents significant challenges.
Purpose of the Study:
- To demonstrate InGaAs/InAs composite channel mHEMTs on a GaAs substrate.
- To evaluate the DC, logic, and high-frequency characteristics of these novel devices.
Main Methods:
- Fabrication of mHEMTs using In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channels on a GaAs substrate.
- Characterization of DC parameters including V, g, SS, DIBL, and Ion/Ioff ratio.
- Measurement and modeling of high-frequency performance (f and f).
Main Results:
- The fabricated mHEMTs (100 nm gate length) achieved V = -0.13 V, g = 949 mS/mm, SS = 84 mV/dec, DIBL = 89 mV/V, and Ion/Ioff = 9.8 × 10^3.
- Excellent high-frequency performance was observed with measured f = 261/304 GHz and modeled f = 258/309 GHz at V = 0.5 V.
- The devices demonstrated lower power consumption compared to other material systems.
Conclusions:
- Successful demonstration of InGaAs/InAs composite channel mHEMTs on GaAs substrates.
- The devices exhibit a well-balanced combination of high-frequency performance (f and f) and low power consumption.
- These findings highlight the potential of this material system for advanced electronic applications.
