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Updated: Aug 13, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Extraction of Graphene's RF Impedance through Thru-Reflect-Line Calibration
Ivo Colmiais1,2, Vitor Silva1,2, Jérôme Borme2
1CMEMS-Center for Microelectromechanical Systems, University of Minho, Campus de Azurém, 4800-058 Guimarães, Portugal.
Abstract:
Graphene has unique properties that can be exploited for radiofrequency applications. Its characterization is key for the development of new graphene devices, circuits, and systems. Due to the two-dimensional nature of graphene, there are challenges in the methodology to extract relevant characteristics that are necessary for device design. In this work, the Thru-Reflect-Line (TRL) calibration was evaluated as a solution to extract graphene's electrical characteristics from 1 GHz to 65 GHz, where the calibration structures' requirements were analyzed. It was demonstrated that thick metallic contacts, a low-loss substrate, and a short and thin contact are necessary to characterize graphene. Furthermore, since graphene's properties are dependent on the polarization voltage applied, a backgate has to be included so that graphene can be characterized for different chemical potentials. Such characterization is mandatory for the design of graphene RF electronics and can be used to extract characteristics such as graphene's resistance, quantum capacitance, and kinetic inductance. Finally, the proposed structure was characterized, and graphene's resistance and quantum capacitance were extracted.

