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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Updated: Aug 13, 2025

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Capacitive NO₂ Detection Using CVD Graphene-Based Device.

Wonbin Ju¹, Sungbae Lee²

¹Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|January 21, 2023

Summary

A new graphene sensor detects nitrogen dioxide (NO2) using quantum capacitance. This Graphene Field-Effect Transistor (G-FET) device shows changes in capacitance with varying NO2 concentrations, enabling sensitive gas detection.

Keywords:

capacitive sensing graphene graphene field-effect transistor nitrogen dioxide adsorbed graphene nitrogen dioxide sensing quantum capacitance

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Area of Science:

Materials Science
Nanotechnology
Chemical Sensing

Background:

Graphene exhibits unique electronic properties suitable for sensor applications.
Capacitive sensing offers a sensitive method for gas detection.
Nitrogen dioxide (NO2) is a common air pollutant requiring effective monitoring.

Purpose of the Study:

To develop a graphene-based capacitive sensor for NO2 detection.
To investigate the use of the quantum capacitance effect for sensing.
To analyze the operational principle and performance of the Graphene Field-Effect Transistor (G-FET) sensor.

Main Methods:

Fabrication of a G-FET device with an enhanced geometrical capacitance using an aluminum back-gate electrode and native oxide insulator.
Exposure of the graphene sensor to varying concentrations of NO2 (1-100 ppm).
Measurement and analysis of device capacitance changes and gate voltage-dependent capacitance variations.

Main Results:

The device demonstrated a measurable change in capacitance correlated with NO2 concentrations.
The quantum capacitance effect was successfully utilized for NO2 sensing.
Analysis of carrier density and potential variations provided insights into the sensing mechanism.

Conclusions:

Graphene-based capacitive sensors are feasible for NO2 detection.
The quantum capacitance effect is a viable principle for sensitive gas sensing.
The developed G-FET device shows potential for accurate NO2 monitoring.