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Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated

Timur S Shamirzaev1,2, Victor V Atuchin3,4,5,6, Vladimir E Zhilitskiy1,2

  • 1Laboratory of Physics and Technology of Heterostructures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.

Nanomaterials (Basel, Switzerland)
|January 21, 2023
PubMed

Keywords:
diffusionrecombinationsemiconductor heterostructurevacancy generation

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