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Updated: Aug 13, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Anton Karlsson1, Helena Grennberg2, Stefan Johansson1
1Microsystems Technology, Department of Materials Science and Engineering, Uppsala University Uppsala Sweden anton.karlsson@angstrom.uu.se.
Controlling graphene oxide (GO) thin film microstructure is key for tailored applications. Electrospray deposition (ESD) distance impacts GO flake structure, with 2-4 mm offering optimal results by minimizing defects.
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