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Published on: November 1, 2013
Improving the linearity of synaptic plasticity of single-walled carbon nanotube field-effect transistors via CdSe
Yantao Zhang1,2, Zhong Wang1,2, Jia Liu3
1Department of Microelectronics, School of Electronic and Information Engineering, Xi'an Jiaotong University, People's Republic of China.
Abstract:
The linearity of synaptic plasticity of single-walled carbon nanotube field-effect transistor (SWCNT FET) was improved by CdSe quantum dots decoration. The linearity of synaptic plasticity in SWCNT FET with decorating QDs was further improved by reducing the P-type doping level from the atmosphere. The synaptic behavior of SWCNT FET is found to be dominated by the charging and discharging processes of interface traps and surface traps, which are predominantly composed of H2O/O2redox couples. The improved synaptic behavior is mainly due to the reduction of the interface trap charging process after QDs decoration. The inherent correlation between the device synaptic behavior and the electron capture process of the traps are investigated through charging-based trap characterization. This study provides an effective scheme for improving linearity and designing new-type SWCNT synaptic devices.
